Yugender, P.; Dhar, R.S.; Nanda, S.; Kumar, K.; Sakthivel, P.; Thirumurugan, A.
Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. Micromachines 2024, 15, 1455.
https://doi.org/10.3390/mi15121455
AMA Style
Yugender P, Dhar RS, Nanda S, Kumar K, Sakthivel P, Thirumurugan A.
Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. Micromachines. 2024; 15(12):1455.
https://doi.org/10.3390/mi15121455
Chicago/Turabian Style
Yugender, Potaraju, Rudra Sankar Dhar, Swagat Nanda, Kuleen Kumar, Pandurengan Sakthivel, and Arun Thirumurugan.
2024. "Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel" Micromachines 15, no. 12: 1455.
https://doi.org/10.3390/mi15121455
APA Style
Yugender, P., Dhar, R. S., Nanda, S., Kumar, K., Sakthivel, P., & Thirumurugan, A.
(2024). Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel. Micromachines, 15(12), 1455.
https://doi.org/10.3390/mi15121455