Article Versions Notes

Han Z, Li X, Wang H, Liu Y, Yang W, Lv Z, Wang M, You S, Zhang J, Hao Y. Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate. Micromachines. 2024; 15(1):156. https://doi.org/10.3390/mi15010156

Han, Zhanfei, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, and Yue Hao. 2024. "Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate" Micromachines 15, no. 1: 156. https://doi.org/10.3390/mi15010156

Han, Z., Li, X., Wang, H., Liu, Y., Yang, W., Lv, Z., Wang, M., You, S., Zhang, J., & Hao, Y. (2024). Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate. Micromachines, 15(1), 156. https://doi.org/10.3390/mi15010156