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Journal: Micromachines, 2023
Volume: 14
Number: 1620

Article: Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect
Authors: by Chenyu Yin, Tianzhi Gao, Hao Wei, Yaolin Chen and Hongxia Liu
Link: https://www.mdpi.com/2072-666X/14/8/1620

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