Simionescu, O.-G.; Avram, A.; Adiaconiţă, B.; Preda, P.; Pârvulescu, C.; Năstase, F.; Chiriac, E.; Avram, M.
Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials. Micromachines 2023, 14, 1096.
https://doi.org/10.3390/mi14061096
AMA Style
Simionescu O-G, Avram A, Adiaconiţă B, Preda P, Pârvulescu C, Năstase F, Chiriac E, Avram M.
Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials. Micromachines. 2023; 14(6):1096.
https://doi.org/10.3390/mi14061096
Chicago/Turabian Style
Simionescu, Octavian-Gabriel, Andrei Avram, Bianca Adiaconiţă, Petruţa Preda, Cătălin Pârvulescu, Florin Năstase, Eugen Chiriac, and Marioara Avram.
2023. "Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials" Micromachines 14, no. 6: 1096.
https://doi.org/10.3390/mi14061096
APA Style
Simionescu, O.-G., Avram, A., Adiaconiţă, B., Preda, P., Pârvulescu, C., Năstase, F., Chiriac, E., & Avram, M.
(2023). Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials. Micromachines, 14(6), 1096.
https://doi.org/10.3390/mi14061096