Article Versions Notes

Han Z, Li X, Wang H, Yuan J, Wang J, Wang M, Yang W, You S, Chang J, Zhang J, et al. Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate. Micromachines. 2023; 14(5):940. https://doi.org/10.3390/mi14050940

Han, Zhanfei, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, and et al. 2023. "Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate" Micromachines 14, no. 5: 940. https://doi.org/10.3390/mi14050940

Han, Z., Li, X., Wang, H., Yuan, J., Wang, J., Wang, M., Yang, W., You, S., Chang, J., Zhang, J., & Hao, Y. (2023). Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate. Micromachines, 14(5), 940. https://doi.org/10.3390/mi14050940