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Journal: Micromachines, 2023
Volume: 14
Number: 887

Article: Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer
Authors: by Xiaoming Yang, Taiqiang Cao, Xiaohua Zhang, Tianqian Li and Hang Luo
Link: https://www.mdpi.com/2072-666X/14/4/887

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