Qin, H.;                     Ba, Z.;                     Xie, S.;                     Zhang, Z.;                     Chen, W.;                     Xun, Q.    
        Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines 2023, 14, 505.
    https://doi.org/10.3390/mi14030505
    AMA Style
    
                                Qin H,                                 Ba Z,                                 Xie S,                                 Zhang Z,                                 Chen W,                                 Xun Q.        
                Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines. 2023; 14(3):505.
        https://doi.org/10.3390/mi14030505
    
    Chicago/Turabian Style
    
                                Qin, Haihong,                                 Zhenhua Ba,                                 Sixuan Xie,                                 Zimo Zhang,                                 Wenming Chen,                                 and Qian Xun.        
                2023. "Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress" Micromachines 14, no. 3: 505.
        https://doi.org/10.3390/mi14030505
    
    APA Style
    
                                Qin, H.,                                 Ba, Z.,                                 Xie, S.,                                 Zhang, Z.,                                 Chen, W.,                                 & Xun, Q.        
        
        (2023). Parameters Design and Optimization of SiC MOSFET Driving Circuit with Consideration of Comprehensive Loss and Voltage Stress. Micromachines, 14(3), 505.
        https://doi.org/10.3390/mi14030505