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Journal: MicromachinesVolume: 14Number: 230
Article: Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash
- Authors:
- Tao Yang1,2,3,
- Zhiliang Xia1,2,3,* and
- Dongyu Fan1,2,3
- et al.
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