Order Article Reprints

Gao X, Guo H, Wang R, Pan D, Chen P, Chen D, Lu H, Zhang R, Zheng Y. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines. 2022; 13(9):1396. https://doi.org/10.3390/mi13091396

Gao, Xiaohui, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng. 2022. "Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric" Micromachines 13, no. 9: 1396. https://doi.org/10.3390/mi13091396

Gao, X., Guo, H., Wang, R., Pan, D., Chen, P., Chen, D., Lu, H., Zhang, R., & Zheng, Y. (2022). Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines, 13(9), 1396. https://doi.org/10.3390/mi13091396