Gao, X.; Guo, H.; Wang, R.; Pan, D.; Chen, P.; Chen, D.; Lu, H.; Zhang, R.; Zheng, Y.
Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines 2022, 13, 1396.
https://doi.org/10.3390/mi13091396
AMA Style
Gao X, Guo H, Wang R, Pan D, Chen P, Chen D, Lu H, Zhang R, Zheng Y.
Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines. 2022; 13(9):1396.
https://doi.org/10.3390/mi13091396
Chicago/Turabian Style
Gao, Xiaohui, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, and Youdou Zheng.
2022. "Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric" Micromachines 13, no. 9: 1396.
https://doi.org/10.3390/mi13091396
APA Style
Gao, X., Guo, H., Wang, R., Pan, D., Chen, P., Chen, D., Lu, H., Zhang, R., & Zheng, Y.
(2022). Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric. Micromachines, 13(9), 1396.
https://doi.org/10.3390/mi13091396
