Liu, H.; Liang, Z.; Meng, J.; Liu, Y.; Wang, H.; Yan, C.; Wu, Z.; Liu, Y.; Zhang, D.; Wang, X.;
et al. 120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. Micromachines 2022, 13, 1172.
https://doi.org/10.3390/mi13081172
AMA Style
Liu H, Liang Z, Meng J, Liu Y, Wang H, Yan C, Wu Z, Liu Y, Zhang D, Wang X,
et al. 120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. Micromachines. 2022; 13(8):1172.
https://doi.org/10.3390/mi13081172
Chicago/Turabian Style
Liu, Honghui, Zhiwen Liang, Jin Meng, Yuebo Liu, Hongyue Wang, Chaokun Yan, Zhisheng Wu, Yang Liu, Dehai Zhang, Xinqiang Wang,
and et al. 2022. "120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode" Micromachines 13, no. 8: 1172.
https://doi.org/10.3390/mi13081172
APA Style
Liu, H., Liang, Z., Meng, J., Liu, Y., Wang, H., Yan, C., Wu, Z., Liu, Y., Zhang, D., Wang, X., & Zhang, B.
(2022). 120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode. Micromachines, 13(8), 1172.
https://doi.org/10.3390/mi13081172