Order Article Reprints

Wang R, Guo H, Hou Q, Lei J, Wang J, Xue J, Liu B, Chen D, Lu H, Zhang R, et al. Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines. 2022; 13(7):1096. https://doi.org/10.3390/mi13071096

Wang, Rui, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, and et al. 2022. "Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization" Micromachines 13, no. 7: 1096. https://doi.org/10.3390/mi13071096

Wang, R., Guo, H., Hou, Q., Lei, J., Wang, J., Xue, J., Liu, B., Chen, D., Lu, H., Zhang, R., & Zheng, Y. (2022). Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines, 13(7), 1096. https://doi.org/10.3390/mi13071096