Wang, R.; Guo, H.; Hou, Q.; Lei, J.; Wang, J.; Xue, J.; Liu, B.; Chen, D.; Lu, H.; Zhang, R.;
et al. Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines 2022, 13, 1096.
https://doi.org/10.3390/mi13071096
AMA Style
Wang R, Guo H, Hou Q, Lei J, Wang J, Xue J, Liu B, Chen D, Lu H, Zhang R,
et al. Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines. 2022; 13(7):1096.
https://doi.org/10.3390/mi13071096
Chicago/Turabian Style
Wang, Rui, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang,
and et al. 2022. "Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization" Micromachines 13, no. 7: 1096.
https://doi.org/10.3390/mi13071096
APA Style
Wang, R., Guo, H., Hou, Q., Lei, J., Wang, J., Xue, J., Liu, B., Chen, D., Lu, H., Zhang, R., & Zheng, Y.
(2022). Evaluation on Temperature-Dependent Transient VT Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization. Micromachines, 13(7), 1096.
https://doi.org/10.3390/mi13071096
