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Journal: Micromachines, 2022
Volume: 13
Number: 1957
1957
Article: Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study
Authors: by Jun-Ho Lee, Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Byoung-Gue Min, Dong Min Kang, Jung Han Choi and Hyun-Seok Kim
Link: https://www.mdpi.com/2072-666X/13/11/1957

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