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Journal: Micromachines, 2022
Volume: 13
Number: 1579
Article:
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser
Authors:
by
Yong Du, Wenqi Wei, Buqing Xu, Guilei Wang, Ben Li, Yuanhao Miao, Xuewei Zhao, Zhenzhen Kong, Hongxiao Lin, Jiahan Yu, Jiale Su, Yan Dong, Wenwu Wang, Tianchun Ye, Jianjun Zhang and Henry H. Radamson
Link:
https://www.mdpi.com/2072-666X/13/10/1579
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