Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review
Abstract
1. Introduction
2. Optical Phase Shifters
2.1. Optical Modulators
2.2. Optical Switches
3. Discussion
3.1. Optical Modulators
3.2. Optical Switches
4. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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Ref. | Material/Structure | Sim./Demo./Opt. a | α (dB/mm) | VπL (Vcm) | αVπL (VdB) | fmod (GHz) | |||
---|---|---|---|---|---|---|---|---|---|
[34] | Si/pn | sim. | 1.05 | (at 0 V) | 0.89 | (0 to −2 V) | 9.35 | 30.00 | (at 0 V, Intrinsic) |
[33] | Si/pn | demo. | 1.20 | (N/A) | 3.00 | (0 to −4 V) | 36.00 | 36.0 | (at 0 V, Intrinsic) |
[49] | Si/pn | demo. | 1.25 | (at 0 V) | 0.46 | (at −0.5 V) | 5.75 | 13.00 | (at −2 V, EO S21) |
[50] | Si/SIS | sim. | 4.20 | (at −1 V) | 0.74 | (0 to −2 V) | 31.08 | 48.00 | (at −1 V, Intrinsic) |
[57] | SiGe/pn | demo. | 3.00 | (IL = 1.5 dB, de Vice 0.5 mm) | 0.67 | (at −0.5 V) | 20.10 | 12.00 | (at −1 V, EO S21) |
[58] | SiGe/SIS | demo. | 3.00 | (at 1.8 V) | 1.08 | (0.9 V to 1.8 V) | 32.40 | 4.00 | (at 0.9 V, EO S21) |
[58] | SiGe/SIS | opt. | 3.00 | (at 1.8 V) | 1.08 | (0.9 V to 1.8 V) | 32.40 | 40.00 | (expected by sim., EO S21) |
[62] | InGaAsP/ SIS | demo. | 2.60 | (at −1.5 V) | 0.09 | (in accumulation mode) | 2.34 | 2.60 | (at 1.5 V, EO S21) |
[62] | InGaAsP/ SIS | opt. | 2.60 | (at −1.5 V) | 0.09 | (in accumulation mode) | 2.34 | 37.00 | (at 1.5 V, intrinsic) |
[61] | InGaAsP/ SIS | demo. | 2.00 | (at 0 V) | 0.05 | 0.94 | 0.10 | (EO S21) | |
[61] | InGaAsP/ SIS | opt. | 2.00 | (at 0 V) | 0.05 | 0.94 | 42.00 | (Intrinsic) | |
[64] | InP/SIS | demo. | 1.20 | (at 0 V) | 1.30 | (0 to 4 V) | 15.60 | 30.00 | (at 0 V, 250 um, EO S21) |
[67] | GaAs/pn | sim. | 1.60 | (at 0 V) | 0.07 | (0 to −0.3 V) | 1.12 | 14.47 | (0 V, Intrinsic) |
[73] | LN | demo. | 0.10 | 2.20 | 2.20 | 70.00 | (EO S21) | ||
[75] | BTO | demo. | 0.57 | 0.23 | 1.30 | 2.00 | (EO S21) | ||
[75] | BTO | opt. | 0.30 | 0.23 | 0.70 | 25.00 | (EO S21, measured value using micro-ring modulator) | ||
[77] | BTO | demo. | 1500.00 | 0.002 | 30.00 | 70.00 | (EO S21) | ||
[77] | BTO | opt. | 800.00 | 0.002 | 16.00 | 70.00 | (EO S21) |
Ref | Switching Principle | Structure | Reported Largest Scalability | Speed | Crosstalk (dB) | Insertion Loss (dB) | Power Consumption |
---|---|---|---|---|---|---|---|
[82,83,84,85] | Thermo-optic | Metal heater | 32 × 32 | ~30 μs | >35 | 8.4 | 1.9 W |
[86,87,88,89] | MEMS | MEMS actuator | 240 × 240 | Sub-μs | >60 | <6.5 | (20–40 V) a |
[83,94,95] | Electro-optic | Si pin | 32 × 32 | <10 ns | >10 | <5 | 1.2 W |
[95] | Si pn | 2 × 2 | Sub-ns | >10 | <11.5 | 4.7 mW | |
[97,98,99] | III-V SOA | 16 × 16 | <3.3 ns | >51.6 | - | 1.26 W | |
[100,102] | III-V pin | 8 × 8 | <5 ns | >18 | <6.3 (sim.) | - | |
[105] | III-V/Si hybrid SIS | 2 × 2 | <20 ns | >23 | >0.07 (sim.) | 0.18 W |
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Kim, Y.; Han, J.-H.; Ahn, D.; Kim, S. Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review. Micromachines 2021, 12, 625. https://doi.org/10.3390/mi12060625
Kim Y, Han J-H, Ahn D, Kim S. Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review. Micromachines. 2021; 12(6):625. https://doi.org/10.3390/mi12060625
Chicago/Turabian StyleKim, Younghyun, Jae-Hoon Han, Daehwan Ahn, and Sanghyeon Kim. 2021. "Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review" Micromachines 12, no. 6: 625. https://doi.org/10.3390/mi12060625
APA StyleKim, Y., Han, J.-H., Ahn, D., & Kim, S. (2021). Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review. Micromachines, 12(6), 625. https://doi.org/10.3390/mi12060625