Kikuchi, H.; Takahashi, K.; Mukaigawa, S.; Takaki, K.; Yukimura, K.
Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma. Micromachines 2021, 12, 599.
https://doi.org/10.3390/mi12060599
AMA Style
Kikuchi H, Takahashi K, Mukaigawa S, Takaki K, Yukimura K.
Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma. Micromachines. 2021; 12(6):599.
https://doi.org/10.3390/mi12060599
Chicago/Turabian Style
Kikuchi, Hisaki, Katsuyuki Takahashi, Seiji Mukaigawa, Koichi Takaki, and Ken Yukimura.
2021. "Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma" Micromachines 12, no. 6: 599.
https://doi.org/10.3390/mi12060599
APA Style
Kikuchi, H., Takahashi, K., Mukaigawa, S., Takaki, K., & Yukimura, K.
(2021). Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma. Micromachines, 12(6), 599.
https://doi.org/10.3390/mi12060599