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Journal: Micromachines, 2021
Volume: 12
Number: 327
327
Article: Analysis of Threshold Voltage Shift for Full V_GS/V_DS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
Authors: by Je-Hyuk Kim, Jun Tae Jang, Jong-Ho Bae, Sung-Jin Choi, Dong Myong Kim, Changwook Kim, Yoon Kim and Dae Hwan Kim
Link: https://www.mdpi.com/2072-666X/12/3/327

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