Next Article in Journal
Surface Modification of PDMS-Based Microfluidic Devices with Collagen Using Polydopamine as a Spacer to Enhance Primary Human Bronchial Epithelial Cell Adhesion
Previous Article in Journal
Liquid Mixing Based on Electrokinetic Vortices Generated in a T-Type Microchannel
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Micromachines
Volume 12
Issue 2
10.3390/mi12020131
micromachines-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

by
Di Niu
1,2,3,4,
Quan Wang
1,4,5,
Wei Li
1,2,3,4,
Changxi Chen
1,2,3,4,
Jiankai Xu
1,2,3,4,
Lijuan Jiang
1,2,3,4,
Chun Feng
1,2,3,4,
Hongling Xiao
1,2,3,4,
Qian Wang
1,4,
Xiangang Xu
5 and
Xiaoliang Wang
1,2,3,4,*
1
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3
School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
4
Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
5
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
*
Author to whom correspondence should be addressed.
Micromachines 2021, 12(2), 131; https://doi.org/10.3390/mi12020131
Submission received: 29 December 2020 / Revised: 22 January 2021 / Accepted: 24 January 2021 / Published: 26 January 2021
Browse Figures
Versions Notes

Abstract

The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease. However, the repair process will gradually recover the electrical properties. We study different repair methods and different repair conditions, propose the best repair conditions, and further fabricate the p-GaN HEMTs devices. The threshold voltage of the fabricated device is 1.6 V, the maximum gate voltage is 7 V, and the on-resistance is 23 Ω·mm. The device has a good performance, which proves that the repair conditions can be successfully applied to the fabricate of the p-GaN HEMT devices.
Keywords: p-GaN high-electron-mobility transistor (HEMT); different repair methods; repair process p-GaN high-electron-mobility transistor (HEMT); different repair methods; repair process

Share and Cite

MDPI and ACS Style

Niu, D.; Wang, Q.; Li, W.; Chen, C.; Xu, J.; Jiang, L.; Feng, C.; Xiao, H.; Wang, Q.; Xu, X.; et al. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines 2021, 12, 131. https://doi.org/10.3390/mi12020131

AMA Style

Niu D, Wang Q, Li W, Chen C, Xu J, Jiang L, Feng C, Xiao H, Wang Q, Xu X, et al. The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines. 2021; 12(2):131. https://doi.org/10.3390/mi12020131

Chicago/Turabian Style

Niu, Di, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, and et al. 2021. "The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT" Micromachines 12, no. 2: 131. https://doi.org/10.3390/mi12020131

APA Style

Niu, D., Wang, Q., Li, W., Chen, C., Xu, J., Jiang, L., Feng, C., Xiao, H., Wang, Q., Xu, X., & Wang, X. (2021). The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT. Micromachines, 12(2), 131. https://doi.org/10.3390/mi12020131

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop