Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Data Availability Statement
Conflicts of Interest
References
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Zhang, W.; Fan, Z.; Shen, A.; Dong, C. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers. Micromachines 2021, 12, 1551. https://doi.org/10.3390/mi12121551
Zhang W, Fan Z, Shen A, Dong C. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers. Micromachines. 2021; 12(12):1551. https://doi.org/10.3390/mi12121551
Chicago/Turabian StyleZhang, Wen, Zenghui Fan, Ao Shen, and Chengyuan Dong. 2021. "Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers" Micromachines 12, no. 12: 1551. https://doi.org/10.3390/mi12121551