Jeong, J.-K.; Sung, J.-Y.; Ko, W.-S.; Nam, K.-R.; Lee, H.-D.; Lee, G.-W.
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory. Micromachines 2021, 12, 1401.
https://doi.org/10.3390/mi12111401
AMA Style
Jeong J-K, Sung J-Y, Ko W-S, Nam K-R, Lee H-D, Lee G-W.
Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory. Micromachines. 2021; 12(11):1401.
https://doi.org/10.3390/mi12111401
Chicago/Turabian Style
Jeong, Jun-Kyo, Jae-Young Sung, Woon-San Ko, Ki-Ryung Nam, Hi-Deok Lee, and Ga-Won Lee.
2021. "Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory" Micromachines 12, no. 11: 1401.
https://doi.org/10.3390/mi12111401
APA Style
Jeong, J.-K., Sung, J.-Y., Ko, W.-S., Nam, K.-R., Lee, H.-D., & Lee, G.-W.
(2021). Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory. Micromachines, 12(11), 1401.
https://doi.org/10.3390/mi12111401