Zhao, Y.; Veltkamp, H.-W.; Schut, T.V.P.; Sanders, R.G.P.; Breazu, B.; Groenesteijn, J.; de Boer, M.J.; Wiegerink, R.J.; Lötters, J.C.
Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology. Micromachines 2020, 11, 561.
https://doi.org/10.3390/mi11060561
AMA Style
Zhao Y, Veltkamp H-W, Schut TVP, Sanders RGP, Breazu B, Groenesteijn J, de Boer MJ, Wiegerink RJ, Lötters JC.
Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology. Micromachines. 2020; 11(6):561.
https://doi.org/10.3390/mi11060561
Chicago/Turabian Style
Zhao, Yiyuan, Henk-Willem Veltkamp, Thomas V. P. Schut, Remco G. P. Sanders, Bogdan Breazu, Jarno Groenesteijn, Meint J. de Boer, Remco J. Wiegerink, and Joost C. Lötters.
2020. "Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology" Micromachines 11, no. 6: 561.
https://doi.org/10.3390/mi11060561
APA Style
Zhao, Y., Veltkamp, H.-W., Schut, T. V. P., Sanders, R. G. P., Breazu, B., Groenesteijn, J., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C.
(2020). Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology. Micromachines, 11(6), 561.
https://doi.org/10.3390/mi11060561
