Next Article in Journal
Driving Waveform Design with Rising Gradient and Sawtooth Wave of Electrowetting Displays for Ultra-Low Power Consumption
Previous Article in Journal
Performance Improvement of Ring-Type PZT Ceramics for Ultrasonic Dispersion System
Open AccessArticle

Simple and Efficient AlN-Based Piezoelectric Energy Harvesters

1
Central European Institute of Technology, Brno University of Technology, CZ-61600 Brno, Czech Republic
2
Department of Microelectronics, Faculty of Electrical Engineering and Communication, Brno University of Technology, CZ-61600 Brno, Czech Republic
3
Department of Electrical and Electronic Technology, Faculty of Electrical Engineering and Communication, Brno University of Technology, CZ-61600 Brno, Czech Republic
4
Institute of Scientific Instruments, Czech Academy of Sciences, CZ-61264 Brno, Czech Republic
5
Department of Control and Instrumentations, Faculty of Electrical Engineering and Communication, Brno University of Technology, CZ-61600 Brno, Czech Republic
6
Department of Microsystem Engineering, School of Mechanical Engineering, Northwestern Polytechnical University, Xi’an 710072, China
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(2), 143; https://doi.org/10.3390/mi11020143
Received: 3 January 2020 / Revised: 24 January 2020 / Accepted: 27 January 2020 / Published: 28 January 2020
(This article belongs to the Special Issue Power MEMS 2019)
In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.
Keywords: AlN; micro-electro-mechanical systems (MEMS) cantilever; complementary metal oxide semiconductor (CMOS) compatible; energy harvesting; high performance AlN; micro-electro-mechanical systems (MEMS) cantilever; complementary metal oxide semiconductor (CMOS) compatible; energy harvesting; high performance
MDPI and ACS Style

Gablech, I.; Klempa, J.; Pekárek, J.; Vyroubal, P.; Hrabina, J.; Holá, M.; Kunz, J.; Brodský, J.; Neužil, P. Simple and Efficient AlN-Based Piezoelectric Energy Harvesters. Micromachines 2020, 11, 143.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop