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InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

NASA Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Author to whom correspondence should be addressed.
Micromachines 2020, 11(11), 958;
Received: 22 September 2020 / Revised: 19 October 2020 / Accepted: 21 October 2020 / Published: 26 October 2020
(This article belongs to the Special Issue Semiconductor Infrared Devices and Applications)
The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development. View Full-Text
Keywords: InAs/InAsSb; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier InAs/InAsSb; type-II superlattice; infrared detector; mid-wavelength infrared (MWIR); unipolar barrier
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MDPI and ACS Style

Ting, D.Z.; Rafol, S.B.; Khoshakhlagh, A.; Soibel, A.; Keo, S.A.; Fisher, A.M.; Pepper, B.J.; Hill, C.J.; Gunapala, S.D. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors. Micromachines 2020, 11, 958.

AMA Style

Ting DZ, Rafol SB, Khoshakhlagh A, Soibel A, Keo SA, Fisher AM, Pepper BJ, Hill CJ, Gunapala SD. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors. Micromachines. 2020; 11(11):958.

Chicago/Turabian Style

Ting, David Z., Sir B. Rafol, Arezou Khoshakhlagh, Alexander Soibel, Sam A. Keo, Anita M. Fisher, Brian J. Pepper, Cory J. Hill, and Sarath D. Gunapala. 2020. "InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors" Micromachines 11, no. 11: 958.

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