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Journal: Micromachines, 2020
Volume: 11
Number: 905
Article:
Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer
Authors:
by
Junhyeok Choi and Sungjun Kim
Link:
https://www.mdpi.com/2072-666X/11/10/905
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