Next Article in Journal
Microfluidics Mediated Production of Foams for Biomedical Applications
Previous Article in Journal
Synthesis and a Photo-Stability Study of Organic Dyes for Electro-Fluidic Display
Open AccessArticle

An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures

Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109, USA
*
Author to whom correspondence should be addressed.
Micromachines 2020, 11(1), 82; https://doi.org/10.3390/mi11010082
Received: 6 December 2019 / Revised: 7 January 2020 / Accepted: 8 January 2020 / Published: 11 January 2020
(This article belongs to the Section A:Physics)
A set of empirical equations were developed to describe the optical properties of III-nitride dot-in-wire nanostructures. These equations depend only on the geometric properties of the structures, enabling the design process of a III-nitride light emitter comprised of dot-in-wire polar nanostructures, to be greatly simplified without first-principle calculations. Results from the empirical model were compared to experimental measurements and reasonably good agreements were observed. Strain relaxation was found to be the dominant effect in determining the optical properties of dot-in-wire nanostructures. View Full-Text
Keywords: gallium nitride; quantum confined Stark effect; strain control gallium nitride; quantum confined Stark effect; strain control
Show Figures

Figure 1

MDPI and ACS Style

Sui, J.; Ku, P.-C. An Empirical Model for GaN Light Emitters with Dot-in-Wire Polar Nanostructures. Micromachines 2020, 11, 82.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop