Li, Y.; Liang, T.; Lei, C.; Hong, Y.; Li, W.; Li, Z.; Ghaffar, A.; Li, Q.; Xiong, J.
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. Micromachines 2019, 10, 629.
https://doi.org/10.3390/mi10100629
AMA Style
Li Y, Liang T, Lei C, Hong Y, Li W, Li Z, Ghaffar A, Li Q, Xiong J.
Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. Micromachines. 2019; 10(10):629.
https://doi.org/10.3390/mi10100629
Chicago/Turabian Style
Li, Yongwei, Ting Liang, Cheng Lei, Yingping Hong, Wangwang Li, Zhiqiang Li, Abdul Ghaffar, Qiang Li, and Jijun Xiong.
2019. "Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer" Micromachines 10, no. 10: 629.
https://doi.org/10.3390/mi10100629
APA Style
Li, Y., Liang, T., Lei, C., Hong, Y., Li, W., Li, Z., Ghaffar, A., Li, Q., & Xiong, J.
(2019). Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. Micromachines, 10(10), 629.
https://doi.org/10.3390/mi10100629