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Open AccessArticle

Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

by 1,2,†, 1,†, 1,†, 1,2,†,‡ and 1,*,†
1
IOM CNR, Laboratorio TASC, Area Science Park Basovizza, S.S. 14 Km 163.5, 34149 Trieste, Italy
2
Department of Physics, University of Trieste, Via Valerio 2, 34128 Trieste, Italy
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Present address: NEST Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, 56127 Pisa, Italy
Academic Editor: Irene D’Amico
Materials 2016, 9(3), 208; https://doi.org/10.3390/ma9030208
Received: 21 December 2015 / Revised: 7 March 2016 / Accepted: 11 March 2016 / Published: 18 March 2016
Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. However, the single-dot occupancy per hole is often made difficult by the fact that lithographically-defined holes are generally much larger than the dots, thus providing several nucleation sites per hole. In addition, deposition of a thin GaAs buffer before the dots tends to further widen the holes in the [110] direction. We have explored a method of native surface oxide removal by using indium beams, which effectively prevents hole elongation along [110] and greatly helps single-dot occupancy per hole. Furthermore, as compared to Ga-assisted deoxidation, In-assisted deoxidation is efficient in completely removing surface contaminants, and any excess In can be easily re-desorbed thermally, thus leaving a clean, smooth GaAs surface. Low temperature photoluminescence showed that inhomogeneous broadening is substantially reduced for QDs grown on In-deoxidized patterns, with respect to planar self-assembled dots. View Full-Text
Keywords: molecular beam epitaxy; quantum dots; nanostructures; nanoimprint lithography; self-assembly; compound semiconductors; GaAs; InAs; 81.07.Ta; 81.15.Hi; 68.35.bg; 81.16.Nd molecular beam epitaxy; quantum dots; nanostructures; nanoimprint lithography; self-assembly; compound semiconductors; GaAs; InAs; 81.07.Ta; 81.15.Hi; 68.35.bg; 81.16.Nd
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Hussain, S.; Pozzato, A.; Tormen, M.; Zannier, V.; Biasiol, G. Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation. Materials 2016, 9, 208.

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