Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy
by
Woobin Lee 1, Seungbeom Choi 1, Kyung Tae Kim 2, Jingu Kang 2, Sung Kyu Park 2,* and Yong-Hoon Kim 1,3,*
Woobin Lee 1, Seungbeom Choi 1, Kyung Tae Kim 2, Jingu Kang 2, Sung Kyu Park 2,* and Yong-Hoon Kim 1,3,*
1
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
2
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
3
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
*
Authors to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Materials 2016, 9(1), 6; https://doi.org/10.3390/ma9010006
Received: 27 October 2015 / Revised: 17 December 2015 / Accepted: 18 December 2015 / Published: 23 December 2015
(This article belongs to the Section Structure Analysis and Characterization)
We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption (A′) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation.
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MDPI and ACS Style
Lee, W.; Choi, S.; Kim, K.T.; Kang, J.; Park, S.K.; Kim, Y.-H. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy. Materials 2016, 9, 6.
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