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Open AccessArticle

Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy

1
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea
2
School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
3
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
*
Authors to whom correspondence should be addressed.
Academic Editor: Jung Ho Je
Materials 2016, 9(1), 6; https://doi.org/10.3390/ma9010006
Received: 27 October 2015 / Revised: 17 December 2015 / Accepted: 18 December 2015 / Published: 23 December 2015
(This article belongs to the Section Structure Analysis and Characterization)
We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a peak is generated in the first-order derivatives of light absorption (A′) vs. wavelength (λ) plots, and by tracing the peak center shift and peak intensity, transition from insulating-to-semiconducting state of the film can be monitored. The peak generation and peak center shift are described based on photon-energy-dependent absorption coefficient of metal-oxide films. We discuss detailed analysis method for metal-oxide semiconductor films and its application in thin-film transistor fabrication. We believe this derivative spectroscopy based determination can be beneficial for a non-destructive and a rapid monitoring of the insulator-to-semiconductor transition in sol-gel oxide semiconductor formation. View Full-Text
Keywords: sol-gel oxide; derivative spectroscopy; insulator-to-semiconductor transition sol-gel oxide; derivative spectroscopy; insulator-to-semiconductor transition
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MDPI and ACS Style

Lee, W.; Choi, S.; Kim, K.T.; Kang, J.; Park, S.K.; Kim, Y.-H. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy. Materials 2016, 9, 6. https://doi.org/10.3390/ma9010006

AMA Style

Lee W, Choi S, Kim KT, Kang J, Park SK, Kim Y-H. Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy. Materials. 2016; 9(1):6. https://doi.org/10.3390/ma9010006

Chicago/Turabian Style

Lee, Woobin; Choi, Seungbeom; Kim, Kyung T.; Kang, Jingu; Park, Sung K.; Kim, Yong-Hoon. 2016. "Determination of Insulator-to-Semiconductor Transition in Sol-Gel Oxide Semiconductors Using Derivative Spectroscopy" Materials 9, no. 1: 6. https://doi.org/10.3390/ma9010006

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