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Open AccessArticle

Crystal Growth of Ca3Nb(Ga1−xAlx)3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations

1
New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10, Aoba, Aramaki, Aoba-ku, Miyagi, Sendai 980-8579, Japan
2
Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Miyagi, Sendai 980-8577, Japan
3
Corporation 6-6-40, Aoba, Aramaki, Aoba-ku, Miyagi, Sendai 980-8579, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Lorena Pardo
Materials 2015, 8(9), 5597-5605; https://doi.org/10.3390/ma8095264
Received: 2 June 2015 / Revised: 6 August 2015 / Accepted: 11 August 2015 / Published: 26 August 2015
(This article belongs to the Special Issue Piezoelectric Materials)
Ca3Nb(Ga1−xAlx)3Si2O14 (CNGAS) single crystals with various Al concentrations were grown by a micro-pulling-down (µ-PD) method and their crystal structures, chemical compositions, crystallinities were investigated. CNGAS crystals with x = 0.2, 0.4 and 0.6 indicated a single phase of langasite-type structure without any secondary phases. In contrast, the crystals with x = 0.8 and 1 included some secondary phases in addition to the langasite-type phase. Lattice parameters, a- and c-axes lengths, of the langasite-type phase systematically decreased with an increase of Al concentration. The results of chemical composition analysis revealed that the actual Al concentrations in as-grown crystals were almost consistent with the nominal compositions. In addition, there was no large segregation of each cation along the growth direction. View Full-Text
Keywords: langasite; piezoelectric crystal; single crystal; micro-pulling-down method langasite; piezoelectric crystal; single crystal; micro-pulling-down method
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Yokota, Y.; Kudo, T.; Ohashi, Y.; Medvedev, A.; Kurosawa, S.; Kamada, K.; Yoshikawa, A. Crystal Growth of Ca3Nb(Ga1−xAlx)3Si2O14 Piezoelectric Single Crystals with Various Al Concentrations. Materials 2015, 8, 5597-5605.

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