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Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

1
Department of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan
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No. 23-10, Wenhua Rd., Xindian District, New Taipei City 23144, Taiwan
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Author to whom correspondence should be addressed.
Materials 2013, 6(11), 5440-5446; https://doi.org/10.3390/ma6115440
Received: 26 September 2013 / Revised: 5 November 2013 / Accepted: 15 November 2013 / Published: 22 November 2013
(This article belongs to the Special Issue Solar Energy Materials 2013)
Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers. View Full-Text
Keywords: solar cells; p-type Si substrate solar cells; p-type Si substrate
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MDPI and ACS Style

Wei, C.-Y.; Lin, C.-H.; Hsiao, H.-T.; Yang, P.-C.; Wang, C.-M.; Pan, Y.-C. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers. Materials 2013, 6, 5440-5446.

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