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Journal: Materials, 2010
Volume: 3
Number: 4950
Article:
Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
Authors:
by
Shigeki Sakai and Mitsue Takahashi
Link:
https://www.mdpi.com/1996-1944/3/11/4950
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