Wu, H.; Fang, L.; Li, Z.; Wu, F.; Zhang, S.; Liu, G.; Zhang, H.; Li, W.; Feng, W.
Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film. Materials 2025, 18, 2090.
https://doi.org/10.3390/ma18092090
AMA Style
Wu H, Fang L, Li Z, Wu F, Zhang S, Liu G, Zhang H, Li W, Feng W.
Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film. Materials. 2025; 18(9):2090.
https://doi.org/10.3390/ma18092090
Chicago/Turabian Style
Wu, Hongyu, Liang Fang, Zhiyi Li, Fang Wu, Shufang Zhang, Gaobin Liu, Hong Zhang, Wanjun Li, and Wenlin Feng.
2025. "Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film" Materials 18, no. 9: 2090.
https://doi.org/10.3390/ma18092090
APA Style
Wu, H., Fang, L., Li, Z., Wu, F., Zhang, S., Liu, G., Zhang, H., Li, W., & Feng, W.
(2025). Fabrication and Optoelectronic Properties of Advanced Quinary Amorphous Oxide Semiconductor InGaZnSnO Thin Film. Materials, 18(9), 2090.
https://doi.org/10.3390/ma18092090
