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Journal: Materials, 2025
Volume: 18
Number: 948

Article: Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation
Authors: by Inkook Hwang, Jiwon Kim, Joungho Lee, Yeonwoong Jung and Changbun Yoon
Link: https://www.mdpi.com/1996-1944/18/5/948

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