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Journal: Materials, 2025
Volume: 18
Number: 5539
5539
Article: Influence of the Si-Layer Thickness on the Structural, Compositional and Resistive Switching Properties of SiO₂/Si/SiO₂ Stack Layers for Resistive Switching Memories
Authors: by Alfredo Morales-Sánchez, Karla E. González-Flores, Jesús M. Germán-Martínez, Braulio Palacios-Márquez, Juan F. Ramírez-Rios, Javier Flores-Méndez, Alfredo Benítez-Lara, Juan R. Ramos-Serrano, Luis Hernández-Martínez and Mario Moreno-Moreno
Link: https://www.mdpi.com/1996-1944/18/24/5539

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