Park, J.; Gil, D.; Park, S.J.; Ahn, J.W.; Choi, M.; Lang, P.; Jang, J.; Kim, D.-K.; Bae, J.-H.
Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. Materials 2025, 18, 5142.
https://doi.org/10.3390/ma18225142
AMA Style
Park J, Gil D, Park SJ, Ahn JW, Choi M, Lang P, Jang J, Kim D-K, Bae J-H.
Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. Materials. 2025; 18(22):5142.
https://doi.org/10.3390/ma18225142
Chicago/Turabian Style
Park, Jinhong, Dohyeon Gil, Se Jin Park, Jae Wook Ahn, Minsu Choi, Philippe Lang, Jaewon Jang, Do-Kyung Kim, and Jin-Hyuk Bae.
2025. "Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors" Materials 18, no. 22: 5142.
https://doi.org/10.3390/ma18225142
APA Style
Park, J., Gil, D., Park, S. J., Ahn, J. W., Choi, M., Lang, P., Jang, J., Kim, D.-K., & Bae, J.-H.
(2025). Effects of Annealing Temperature Combinations in InOx/AlOx Heterostructure for High-Performance and Stable Solution-Processed Junctionless Transistors. Materials, 18(22), 5142.
https://doi.org/10.3390/ma18225142
