Article Versions Notes

Espiari A, Padberg H, Kiehn A, Schnieders K, Zhang J, Mussler G, Wiefels S, Jalil AR, Grützmacher D. The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. Materials. 2025; 18(20):4681. https://doi.org/10.3390/ma18204681

Espiari, Abbas, Henriette Padberg, Alexander Kiehn, Kristoffer Schnieders, Jiayuan Zhang, Gregor Mussler, Stefan Wiefels, Abdur Rehman Jalil, and Detlev Grützmacher. 2025. "The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices" Materials 18, no. 20: 4681. https://doi.org/10.3390/ma18204681

Espiari, A., Padberg, H., Kiehn, A., Schnieders, K., Zhang, J., Mussler, G., Wiefels, S., Jalil, A. R., & Grützmacher, D. (2025). The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. Materials, 18(20), 4681. https://doi.org/10.3390/ma18204681