Espiari, A.; Padberg, H.; Kiehn, A.; Schnieders, K.; Zhang, J.; Mussler, G.; Wiefels, S.; Jalil, A.R.; Grützmacher, D.
The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. Materials 2025, 18, 4681.
https://doi.org/10.3390/ma18204681
AMA Style
Espiari A, Padberg H, Kiehn A, Schnieders K, Zhang J, Mussler G, Wiefels S, Jalil AR, Grützmacher D.
The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. Materials. 2025; 18(20):4681.
https://doi.org/10.3390/ma18204681
Chicago/Turabian Style
Espiari, Abbas, Henriette Padberg, Alexander Kiehn, Kristoffer Schnieders, Jiayuan Zhang, Gregor Mussler, Stefan Wiefels, Abdur Rehman Jalil, and Detlev Grützmacher.
2025. "The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices" Materials 18, no. 20: 4681.
https://doi.org/10.3390/ma18204681
APA Style
Espiari, A., Padberg, H., Kiehn, A., Schnieders, K., Zhang, J., Mussler, G., Wiefels, S., Jalil, A. R., & Grützmacher, D.
(2025). The Influence of Reactive Ion Etching Chemistry on the Initial Resistance and Cycling Stability of Line-Type (Bridge) Phase-Change Memory Devices. Materials, 18(20), 4681.
https://doi.org/10.3390/ma18204681