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Journal: Materials, 2025
Volume: 18
Number: 4531
Article:
Improvement of Physical and Electrical Characteristics in 4H-SiC MOS Capacitors Using AlON Thin Films Fabricated via Plasma-Enhanced Atomic Layer Deposition
Authors:
by
Zhaopeng Bai, Chengxi Ding, Yunduo Guo, Man Luo, Zimo Zhou, Lin Gu, Qingchun Zhang and Hongping Ma
Link:
https://www.mdpi.com/1996-1944/18/19/4531
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