Walkiewicz-Pietrzykowska, A.; Jankowski, K.; Kurjata, J.; Dolot, R.; Brzozowski, R.; Zakrzewska, J.; Uznanski, P.
Silicon Oxycarbide Thin Films Produced by Hydrogen-Induced CVD Process from Cyclic Dioxa-Tetrasilacyclohexane. Materials 2025, 18, 2911.
https://doi.org/10.3390/ma18122911
AMA Style
Walkiewicz-Pietrzykowska A, Jankowski K, Kurjata J, Dolot R, Brzozowski R, Zakrzewska J, Uznanski P.
Silicon Oxycarbide Thin Films Produced by Hydrogen-Induced CVD Process from Cyclic Dioxa-Tetrasilacyclohexane. Materials. 2025; 18(12):2911.
https://doi.org/10.3390/ma18122911
Chicago/Turabian Style
Walkiewicz-Pietrzykowska, Agnieszka, Krzysztof Jankowski, Jan Kurjata, Rafał Dolot, Romuald Brzozowski, Joanna Zakrzewska, and Paweł Uznanski.
2025. "Silicon Oxycarbide Thin Films Produced by Hydrogen-Induced CVD Process from Cyclic Dioxa-Tetrasilacyclohexane" Materials 18, no. 12: 2911.
https://doi.org/10.3390/ma18122911
APA Style
Walkiewicz-Pietrzykowska, A., Jankowski, K., Kurjata, J., Dolot, R., Brzozowski, R., Zakrzewska, J., & Uznanski, P.
(2025). Silicon Oxycarbide Thin Films Produced by Hydrogen-Induced CVD Process from Cyclic Dioxa-Tetrasilacyclohexane. Materials, 18(12), 2911.
https://doi.org/10.3390/ma18122911