Article Versions Notes

Mancuso AS, Sangregorio E, Muoio A, De Luca S, Kushoro MH, Gallo E, Vanellone S, Quadrivi E, Trotta A, Calcagno L, et al. Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector. Materials. 2025; 18(11):2413. https://doi.org/10.3390/ma18112413

Mancuso, Alfio Samuele, Enrico Sangregorio, Annamaria Muoio, Saverio De Luca, Matteo Hakeem Kushoro, Erik Gallo, Silvia Vanellone, Eleonora Quadrivi, Antonio Trotta, Lucia Calcagno, and et al. 2025. "Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector" Materials 18, no. 11: 2413. https://doi.org/10.3390/ma18112413

Mancuso, A. S., Sangregorio, E., Muoio, A., De Luca, S., Kushoro, M. H., Gallo, E., Vanellone, S., Quadrivi, E., Trotta, A., Calcagno, L., & Via, F. L. (2025). Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction Detector. Materials, 18(11), 2413. https://doi.org/10.3390/ma18112413