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Journal: Materials, 2024
Volume: 17
Number: 1908

Article: 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses
Authors: by Laura Anoldo, Edoardo Zanetti, Walter Coco, Alfio Russo, Patrick Fiorenza and Fabrizio Roccaforte
Link: https://www.mdpi.com/1996-1944/17/8/1908

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