Qian, J.; Shi, L.; Jin, M.; Bhattacharya, M.; Shimbori, A.; Yu, H.; Houshmand, S.; White, M.H.; Agarwal, A.K.
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs. Materials 2024, 17, 1455.
https://doi.org/10.3390/ma17071455
AMA Style
Qian J, Shi L, Jin M, Bhattacharya M, Shimbori A, Yu H, Houshmand S, White MH, Agarwal AK.
Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs. Materials. 2024; 17(7):1455.
https://doi.org/10.3390/ma17071455
Chicago/Turabian Style
Qian, Jiashu, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Atsushi Shimbori, Hengyu Yu, Shiva Houshmand, Marvin H. White, and Anant K. Agarwal.
2024. "Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs" Materials 17, no. 7: 1455.
https://doi.org/10.3390/ma17071455
APA Style
Qian, J., Shi, L., Jin, M., Bhattacharya, M., Shimbori, A., Yu, H., Houshmand, S., White, M. H., & Agarwal, A. K.
(2024). Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs. Materials, 17(7), 1455.
https://doi.org/10.3390/ma17071455