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Journal: Materials, 2024
Volume: 17
Number: 5789

Article: Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients
Authors: by Ju-Hyeong Sun, Jae-Hyeon Park, Si-Young Bae, Yun-Ji Shin, Yong-Jin Kwon, Won-Jae Lee, Se-Hun Kwon and Seong-Min Jeong
Link: https://www.mdpi.com/1996-1944/17/23/5789

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