Article Versions Notes

Sun J-H, Park J-H, Bae S-Y, Shin Y-J, Kwon Y-J, Lee W-J, Kwon S-H, Jeong S-M. Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients. Materials. 2024; 17(23):5789. https://doi.org/10.3390/ma17235789

Sun, Ju-Hyeong, Jae-Hyeon Park, Si-Young Bae, Yun-Ji Shin, Yong-Jin Kwon, Won-Jae Lee, Se-Hun Kwon, and Seong-Min Jeong. 2024. "Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients" Materials 17, no. 23: 5789. https://doi.org/10.3390/ma17235789

Sun, J.-H., Park, J.-H., Bae, S.-Y., Shin, Y.-J., Kwon, Y.-J., Lee, W.-J., Kwon, S.-H., & Jeong, S.-M. (2024). Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients. Materials, 17(23), 5789. https://doi.org/10.3390/ma17235789