Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

Aktas, Muhammed; Grzanka, Szymon; Marona, Łucja; Goss, Jakub; Staszczak, Grzegorz; Kafar, Anna; Perlin, Piotr

doi:10.3390/ma17184502

Open AccessArticle

Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

by

Muhammed Aktas

¹

,

Szymon Grzanka

¹

,

Łucja Marona

¹,

Jakub Goss

²,

Grzegorz Staszczak

¹

,

Anna Kafar

¹

and

Piotr Perlin

^1,*

¹

Institute of High Pressure Physics “Unipress”, Sokolowska 29, 01-142 Warsaw, Poland

²

Proinspiria Jakub Goss, Rubinowa 41, 05-500 Piaseczno, Poland

^*

Author to whom correspondence should be addressed.

Materials 2024, 17(18), 4502; https://doi.org/10.3390/ma17184502

Submission received: 14 August 2024 / Revised: 27 August 2024 / Accepted: 4 September 2024 / Published: 13 September 2024

(This article belongs to the Special Issue Preparation, Characterization and Application of Photonic Materials and Devices)

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Abstract

This work reports on the possibility of sustaining a stable operation of polarization-doped InGaN light emitters over a particularly broad temperature range. We obtained efficient emission from InGaN light-emitting diodes between 20 K and 295 K and from laser diodes between 77 K and 295 K under continuous wave operation. The main part of the p-type layers was fabricated from composition-graded AlGaN. To optimize injection efficiency and improve contact resistance, we introduced thin Mg-doped layers of GaN (subcontact) and AlGaN (electron blocking layer in the case of laser diodes). In the case of LEDs, the optical emission efficiency at low temperatures seems to be limited by electron overshooting through the quantum wells. For laser diodes, a limiting factor is the freeze-out of the magnesium-doped electron blocking layer for temperatures below 160 K. The GaN:Mg subcontact layer works satisfyingly even at the lowest operating temperature (20 K).

Keywords: optoelectronics; laser diode; LED; cryogenic temperature; III-nitride semiconductor; InGaN quantum wells; polarization doping

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MDPI and ACS Style

Aktas, M.; Grzanka, S.; Marona, Ł.; Goss, J.; Staszczak, G.; Kafar, A.; Perlin, P. Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation. Materials 2024, 17, 4502. https://doi.org/10.3390/ma17184502

AMA Style

Aktas M, Grzanka S, Marona Ł, Goss J, Staszczak G, Kafar A, Perlin P. Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation. Materials. 2024; 17(18):4502. https://doi.org/10.3390/ma17184502

Chicago/Turabian Style

Aktas, Muhammed, Szymon Grzanka, Łucja Marona, Jakub Goss, Grzegorz Staszczak, Anna Kafar, and Piotr Perlin. 2024. "Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation" Materials 17, no. 18: 4502. https://doi.org/10.3390/ma17184502

APA Style

Aktas, M., Grzanka, S., Marona, Ł., Goss, J., Staszczak, G., Kafar, A., & Perlin, P. (2024). Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation. Materials, 17(18), 4502. https://doi.org/10.3390/ma17184502

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Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation

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