Gong, J.; Wang, W.; Liu, W.; Song, Z.
Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679. Materials 2024, 17, 3295.
https://doi.org/10.3390/ma17133295
AMA Style
Gong J, Wang W, Liu W, Song Z.
Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679. Materials. 2024; 17(13):3295.
https://doi.org/10.3390/ma17133295
Chicago/Turabian Style
Gong, Juntao, Weilei Wang, Weili Liu, and Zhitang Song.
2024. "Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679" Materials 17, no. 13: 3295.
https://doi.org/10.3390/ma17133295
APA Style
Gong, J., Wang, W., Liu, W., & Song, Z.
(2024). Correction: Gong et al. Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive. Materials 2024, 17, 679. Materials, 17(13), 3295.
https://doi.org/10.3390/ma17133295