Wang, Z.;                     Lu, N.;                     Wang, J.;                     Geng, D.;                     Wang, L.;                     Yang, G.    
        Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations. Materials 2023, 16, 2282.
    https://doi.org/10.3390/ma16062282
    AMA Style
    
                                Wang Z,                                 Lu N,                                 Wang J,                                 Geng D,                                 Wang L,                                 Yang G.        
                Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations. Materials. 2023; 16(6):2282.
        https://doi.org/10.3390/ma16062282
    
    Chicago/Turabian Style
    
                                Wang, Ziqi,                                 Nianduan Lu,                                 Jiawei Wang,                                 Di Geng,                                 Lingfei Wang,                                 and Guanhua Yang.        
                2023. "Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations" Materials 16, no. 6: 2282.
        https://doi.org/10.3390/ma16062282
    
    APA Style
    
                                Wang, Z.,                                 Lu, N.,                                 Wang, J.,                                 Geng, D.,                                 Wang, L.,                                 & Yang, G.        
        
        (2023). Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations. Materials, 16(6), 2282.
        https://doi.org/10.3390/ma16062282