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Journal: Materials, 2023
Volume: 16
Number: 6184
Article:
Double-Forming Mechanism of TaOx-Based Resistive Memory Device and Its Synaptic Applications
Authors:
by
Dongyeol Ju, Sunghun Kim, Subaek Lee and Sungjun Kim
Link:
https://www.mdpi.com/1996-1944/16/18/6184
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