Brzozowski, E.; Kaminski, M.; Taube, A.; Sadowski, O.; Krol, K.; Guziewicz, M.
Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres. Materials 2023, 16, 4381.
https://doi.org/10.3390/ma16124381
AMA Style
Brzozowski E, Kaminski M, Taube A, Sadowski O, Krol K, Guziewicz M.
Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres. Materials. 2023; 16(12):4381.
https://doi.org/10.3390/ma16124381
Chicago/Turabian Style
Brzozowski, Ernest, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol, and Marek Guziewicz.
2023. "Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres" Materials 16, no. 12: 4381.
https://doi.org/10.3390/ma16124381
APA Style
Brzozowski, E., Kaminski, M., Taube, A., Sadowski, O., Krol, K., & Guziewicz, M.
(2023). Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres. Materials, 16(12), 4381.
https://doi.org/10.3390/ma16124381
