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Journal: Materials, 2022
Volume: 15
Number: 913
Article:
The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped α-Ga2O3 Metal–Semiconductor Field-Effect Transistors
Authors:
by
Han-Sol Ro, Sung Ho Kang and Sungyeop Jung
Link:
https://www.mdpi.com/1996-1944/15/3/913
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